| PART |
Description |
Maker |
| DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
| ATF-13336 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| ATF-21170 |
0.5-6 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-13736 ATF-13736-STR ATF-13736-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-25735 |
0.5-10 GHz General Purpose Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| NPT2010 |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| ATF13284 ATF13284STR ATF13284TR1 |
1-16 GHz Low Noise Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
|
| ATF13284TR2 ATF-13284 ATF-13284-STR ATF-13284-TR1 |
1-16 GHz Low Noise Gallium Arsenide FET 1-16 GHz的低噪声砷化镓场效应
|
Agilent(Hewlett-Packard...
HP[Agilent(Hewlett-Packard)]
|
| ATF-10736 |
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
|
| ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136 |
ER 3C 3#16 PIN RECP BOX
0.5-12 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
