| PART |
Description |
Maker |
| 2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
| 40TR12B |
SENSOR / ULTRASONIC / 40KHZ / TRAN
|
Jameco
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| 2SB1645 |
Silicon PNP triple diffusion planar type Darlington(For power amplification) 8 A, 160 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SB1154 |
FILTER PLATE 10 A, 80 V, PNP, Si, POWER TRANSISTOR
Silicon PNP epitaxial planar type(For power switching)
|
EPCOS AG
PANASONIC[Panasonic Semiconductor]
|
| 2N6437 2N6438 2N6437-D |
POWER TRANSISTORS PNP SILICON 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA
High-Power PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| 2SB1631 |
Silicon PNP epitaxial planar type(For power amplification) 3 A, 60 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SB941 2SB941A 2SD1266A 2SB0941 2SD1266 2SB941APQ |
Silicon PNP epitaxial planar type power transistor
Silicon PNP epitaxial planar type(For low-frequency power amplification)
3 A, 80 V, PNP, Si, POWER TRANSISTOR
3 A, 60 V, PNP, Si, POWER TRANSISTOR
|
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
