PART |
Description |
Maker |
MID145-12A3 MII145-12A3 |
1200V IGBT module IGBT Modules: Boost Configurated IGBT Modules IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation IXYS, Corp.
|
MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
VIO50-06P1 VII50-06P1 VDI50-06P1 VID50-06P1 |
CONN/6 POS HDR SHRD SGL RA LK 42.5 A, 600 V, N-CHANNEL IGBT IGBT Modules in ECO-PAC 2 42.5 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT 300 A, 1200 V, N-CHANNEL IGBT 100 A, 1000 V, N-CHANNEL IGBT 100 A, 1200 V, N-CHANNEL IGBT 75 A, 1000 V, N-CHANNEL IGBT 200 A, 1000 V, N-CHANNEL IGBT 50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG SIEMENS A G
|
PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
STGP10N60 STGP10N60L 6209 |
25 A, 600 V, N-CHANNEL IGBT, TO-220AB From old datasheet system N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT 5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲,450 V/500 V Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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