PART |
Description |
Maker |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
AP25G45EM |
N-CHANNEL INSULATED GATE
|
Advanced Power Electronics Corp.
|
IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
MSAGX60F60A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Microsemi Corporation
|
SSM28G45EM |
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
|
Silicon Standard Corp.
|
AP40G120W |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
18T10 18T10G-TN3-R 18T10G-TN3-T 18T10L-TN3-R 18T10 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|
MSAHZ52F120A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Microsemi Corporation
|