PART |
Description |
Maker |
2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS From old datasheet system FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
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Toshiba Corporation Toshiba Semiconductor
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MAX5069 MAX5069DAUE MAX5069A MAX5069AAUE MAX5069B |
High-Frequency / Current-Mode PWM Controller with Accurate Oscillator and Dual FET Drivers High-Frequency, Current-Mode PWM Controller with Accurate Oscillator and Dual FET Drivers GT 10C 10#16 PIN PLUG
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http:// MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
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PS9402 PS9402-E3-AX PS9402-V-AX PS9402-V-E3-AX |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
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California Eastern Labs
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ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
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International Rectifier, Corp. Semtech Corporation
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS From old datasheet system
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ON Semiconductor Motorola, Inc.
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MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
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ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
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MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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MOTOROLA[Motorola, Inc] ON Semiconductor
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4590R-223K 4590R-563K 4590R-823K 4590-682K 4590-68 |
INDUCTOR HIGH CURRENT 22.0UH 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR INDUCTOR HIGH CURRENT 56.0UH 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR INDUCTOR HIGH CURRENT 82.0UH 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR INDUCTOR HIGH CURRENT 6.8UH 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR High Current Filter Inductors INDUCTOR HIGH CURRENT 5.6UH 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR INDUCTOR HIGH CURRENT 1500UH 1 ELEMENT, 1500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR INDUCTOR HIGH CURRENT 470.0UH 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR INDUCTOR HIGH CURRENT 180.0UH 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR INDUCTOR HIGH CURRENT 18000UH 1 ELEMENT, 18000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR INDUCTOR HIGH CURRENT 680.0UH 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 10000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR AXIAL LEADED INDUCTOR HIGH CURRENT 27000UH 1 ELEMENT, 15000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
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API Delevan
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MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
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MOTOROLA[Motorola, Inc]
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