| PART |
Description |
Maker |
| MT29F8G08MAAWC MT29F8G08MAAWP |
NAND Flash Memory MLC
|
Micron
|
| KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| RM017A100JAN120 RM017A106JAJ650 RM017A106JAL650 RM |
RoHS Compliant SMPS Stacked MLC Capacitors
|
AVX Corporation
|
| H27UCG8T2BTR-BC |
F20 64Gb MLC NAND Flash Memory
|
Hynix
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NZG10-1M |
Legacy 100 Hz to 1 MHz
|
Micronetics, Inc.
|
| NZG100-5M |
Legacy 100 Hz to 5 MHz
|
Micronetics, Inc.
|
| NZG10-20K |
Legacy 100 Hz to 20 kHz
|
Micronetics, Inc.
|
| NMA2106-A1E |
Legacy 100 Hz to 30 MHz
|
Micronetics, Inc.
|
| NMA2006-A2S |
Legacy 100 Hz to 30 MHz
|
Micronetics, Inc.
|
| NZG100-2M |
Legacy 100 Hz to 2 MHz
|
Micronetics, Inc.
|
|
