| PART |
Description |
Maker |
| 2SC5343SF |
Low collector saturation voltage: VCE=0.25V(Max.) Low output capacitance:Cob=2pF(Typ.)
NPN Silicon Transistor
|
TY Semiconductor Co., Ltd
TY Semicondutor
|
| 1SS313 |
Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6 (Typ.)
|
TY Semiconductor Co., Ltd
|
| 29W040 M29W040 M29W040-120K5TR M29W040-100K5TR M29 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125
Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC
High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125
; Capacitance:180pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的8，统一座低电压单电源闪
CAP RF 2.0PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，统一座低电压单电源闪
CAP RF 27PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 1.8PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 24PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 22PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
High Speed High Drive Precision Dual Operational Amplifier 8-SOIC
CAP RF 1.0PF 250V 0603 SMD
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 0 to 70
Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP
512K X 8 FLASH 3V PROM, 150 ns, PQCC32
512K X 8 FLASH 3V PROM, 200 ns, PDSO32
512K X 8 FLASH 3V PROM, 120 ns, PQCC32
|
意法半导
STMicroelectronics N.V.
|
| 2SC2412 |
Low Cob.Cob=2.0pF (Typ.) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BB565 Q62702-B0873 Q62702-B0869 |
From old datasheet system
Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| TZ03P450E169B00 TZ03Z050E169B00 TZ03T110E169B00 TZ |
CAP 6.8-45.0PF 6MM TOPADJ YEL CAPACITOR, VARIABLE, CERAMIC, 100 V, 6.8 pF - 45 pF, VERTICAL ADJUSTER, THROUGH HOLE MOUNT
CAP 1.5-5.0PF 6MM TOPADJ BLU CAPACITOR, VARIABLE, CERAMIC, 100 V, 1.5 pF - 5 pF, VERTICAL ADJUSTER, THROUGH HOLE MOUNT
CAP 3.0-11.0PF 6MM TOPADJ WHT CAPACITOR, VARIABLE, CERAMIC, 100 V, 3 pF - 11 pF, VERTICAL ADJUSTER, THROUGH HOLE MOUNT
CAP 9.8-60.0PF 6MM TOPADJ BRN CAPACITOR, VARIABLE, CERAMIC, 100 V, 9.8 pF - 60 pF, VERTICAL ADJUSTER, THROUGH HOLE MOUNT
|
Murata Manufacturing Co., Ltd.
|
| BB644 Q62702-B0907 Q62702-B0905 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Siemens Group
|
| HSMBJSAC8.0 HSMBJSAC10 HSMBJSAC12 HSMBJSAC15 HSMBJ |
Low Capacitance TVS
500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| PI3B32160AE PI3B32160 PI3B32160A |
3.3V, Low Capacitance 16-Bit to 32-Bit, DeMux NanoSwitchwith Precharged Outputs
3.3V/ Low Capacitance 16-Bit to 32-Bit Demux PCI Hot Plug Bus Switch with Precharged Outputs for Live Insertion
3.3V/ Low Capacitance 16-Bit to 32-Bit/ DeMux NanoSwitch with Precharged Outputs
|
Pericom Semiconductor Corporation
Pericom Semiconductor Corp.
Pericom Technology
|
| NSQA6V8AW5T2G NSQA12VAW5T2 NSQA12VAW5T2G NSQA6V8AW |
From old datasheet system
Low Capacitance Quad Array for ESD Protection
Low Capacitance Quad TVS Array in SC-88A
|
ONSEMI[ON Semiconductor]
|
