| PART |
Description |
Maker |
| W9864G6IH W9864G6IH-7 W9864G6IH-7S W9864G6IH-5 W98 |
1M × 4BANKS × 16BITS SDRAM
|
Winbond
http://
|
| HY5W6B6DLF-HE HY5W6B6DLF-PE HY5W6B6DLFP-HE HY5W6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| HY62SF16404C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16806A-C HY62LF16806A-I |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
| HY62SF16806B-I HY62SF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
| HY62SF1640 HY62SF16403A HY62SF16403A-I HY62SF16403 |
256Kx16bit full CMOS SRAM
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| TCS59S6408CFTL-80 TCS59S6408CFT-80 TCS59S6408CFTL- |
2M×4Banks×8Bits Synchronous DRAM(2M×8位同步动态RAM) 200万4Banks × 8位同步DRAM00万8位同步动态RAM）的
4M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
|
Toshiba Corporation
Toshiba, Corp.
|
| IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset
RELAY 024VDC 01A DPDT-XX FORM:2C UC
Bi-Lobe Standard Metal Shell Nano Offset Connector
Low Power 5V/3.0V P Reset
Low Power/ 5V/ P Reset
Low Power, 5V, 楼矛P Reset
Low Power 5V P Reset
Low Power, 5V, P Reset
Low Power, 5V, μP Reset
4.375V power reset
|
IMP INC.
IMP Inc
IMP[IMP, Inc]
IMP[IMP Inc]
|
| LE28F1101T-40 LE28F1101T-45 LE28F1101T-55 LE28F110 |
1M(65536words×16bits) Flash EEPROM
1M(65536words】16bits) Flash EEPROM
|
Sanyo Semicon Device
|
