| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA2059 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SA206506 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
Toshiba Semiconductor
|
| 2SC4681 |
NPN EPITAXIAL TYPE (STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC468105 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC468405 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1431-Y |
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
