| PART |
Description |
Maker |
| NSI45020T1G |
45 V, 20 mA ? 15% CCR SOD-123
45 V, 20 mA 15% CCR SOD-123 LED DISPLAY DRIVER, PDSO2
Constant Current Regulator & LED Driver
|
ON Semiconductor
|
| ND3050A ND3050B ND3000 ND3038_1 ND3038_1A ND3038_1 |
DIODE ZENER SINGLE 150mW 10Vz 0.05mA-Izt 0.05 0.1uA-Ir 7.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 500mW 11Vz 0.05mA-Izt 0.05 0.05uA-Ir 8.4 SOD-123 3K/REEL S到K波段砷化镓变容二极管
DIODE ZENER SINGLE 500mW 8.2Vz 20mA-Izt 0.02549 0.1uA-Ir 6.5 SOD-123 3K/REEL S到K波段砷化镓变容二极管
MB 39C 37#20 2#16 SKT PLUG S到K波段砷化镓变容二极管
MB 16C 16#16 PIN PLUG S到K波段砷化镓变容二极管
S TO K-BAND GaAs VARACTOR DIODE S到K波段砷化镓变容二极管
DIODE ZENER SINGLE 500mW 8Vz 20mA-Izt 0.0257 0.1uA-Ir 6.5 SOD-123 3K/REEL
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 37LV36-TIL 37LV36-TP 37LV65 37LV65-TSN 37LV128 37L |
DIODE ZENER SINGLE 200mW 36Vz 2mA-Izt 0.0556 0.1uA-Ir 25.2 SOD-323 3K/REEL 36K4K的，28K串行EPROM家庭
DIODE ZENER SINGLE 200mW 33Vz 2mA-Izt 0.0606 0.1uA-Ir 23.1 SOD-323 3K/REEL 36K4K的，28K串行EPROM家庭
DIODE ZENER SINGLE 500mW 36Vz 2mA-Izt 0.0556 0.1uA-Ir 25.2 SOD-123 3K/REEL 36K4K的，28K串行EPROM家庭
DIODE/SM, ZEN 30V .5MA 0.41W /-5% SOD-123 36K4K的，28K串行EPROM家庭
DIODE ZENER SINGLE 200mW 2.4Vz 5mA-Izt 0.0833 50uA-Ir 1 SOD-323 3K/REEL 36K4K的，28K串行EPROM家庭
36K, 64K, and 128K Serial EPROM Family 36K4K的，28K串行EPROM家庭
DIODE ZENER SINGLE 500mW 2.7Vz 5mA-Izt 0.0741 20uA-Ir 1 SOD-123 3K/REEL
DIODE ZENER 36V 500MW SOD-123
DIODE ZENER SINGLE 150mW 2.7Vz 5mA-Izt 0.074 20uA-Ir 1 SOD-523 3K/REEL
DIODE ZENER SINGLE 150mW 2.4Vz 5mA-Izt 0.083 50uA-Ir 1 SOD-523 3K/REEL
DIODE ZENER SINGLE 500mW 33Vz 2mA-Izt 0.0606 0.1uA-Ir 23.1 SOD-123 3K/REEL
DIODE, ZENER 36V 500MW SOD-123
DIODE ZENER SINGLE 200mW 30Vz 2mA-Izt 0.0667 0.1uA-Ir 21 SOD-323 3K/REEL
DIODE ZENER SINGLE 500mW 2.4Vz 5mA-Izt 0.0833 50uA-Ir 1 SOD-123 3K/REEL
DIODE ZENER 39V 500MW SOD-123
36K/ 64K/ and 128K Serial EPROM Family
128K EPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D2632 |
DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| JE10 JE1046ZTL2R JE10112HL1 JE10112HL1R JE10112HL2 |
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 1.1pF; Voltage: 100V; Tolerance: ±0.25pF; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 50V; Tolerance: ±1%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 50V; Tolerance: ±10%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
MINIATURE HIGH POWER LATCHING RELAY 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 1.2pF; Voltage: 50V; Tolerance: ±0.25pF; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
MINIATURE HIGH POWER LATCHING RELAY
|
HONGFA[Hongfa Technology]
厦门宏发电声股份有限公司
Xiamen Hongfa Electroacoustic Co., Ltd.
???瀹???靛０?′唤??????
|
| WPA60R48D3325 WPA60 WPA60R48D0515 WPA60R48D0533 WP |
DIODE ZENER SINGLE 500mW 28.4Vz 5mA-Izt 0.0252 0.05uA-Ir 23 SOD-123 3K/REEL
DIODE ZENER SINGLE 200mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOD-323 3K/REEL
DIODE ZENER SINGLE 500mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOD-123 3K/REEL
DIODE ZENER SINGLE 500mW 25.6Vz 5mA-Izt 0.0252 0.05uA-Ir 21 SOD-123 3K/REEL
DIODE ZENER SINGLE 500mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOD-123 3K/REEL
DIODE ZENER SINGLE 200mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOD-323 3K/REEL
DIODE ZENER SINGLE 500mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOD-123 3K/REEL
DIODE ZENER SINGLE 200mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOD-323 3K/REEL
60 WATT DUAL OUTPUT QUARTER BRICK DC/DC CONVERTER
|
CANDD[C&D Technologies]
|
| AUIRF3710ZSTRL AUIRF3710ZSTRR AUIRF3710Z AUIRF3710 |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
International Rectifier
|
| IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
|
| SI4410DYPBF SI4410DYTRPBF |
N-Channel MOSFET
10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA LEAD FREE, SO-8
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
Hypertronics, Corp.
International Rectifier
|
