PART |
Description |
Maker |
SSP3N80A |
ACB 2C 2#16S SKT PLUG 3 A, 800 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
IRL640A |
Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRL540A |
Advanced Power MOSFET 28 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IRFW540 IRFW540A IRFI540A IRFWI540A IRFW540ATM |
Advanced Power MOSFET 28 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA 100V N-Channel A-FET N-CHANNEL POWER MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFIZ24NPBF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
IRLM220A IRLM220ATF |
200V N-Channel A-FET Advanced Power MOSFET HEXFET Power MOSFET
|
Fairchild Semiconductor International Rectifier
|
IRLM110A IRLM110ATF |
N-CHANNEL MOSFET HEXFET Power MOSFET Advanced Power MOSFET 100V N-Channel Logic Level A-FET
|
International Rectifier FAIRCHILD[Fairchild Semiconductor]
|
IRLI3705NPBF IRLI3705NPBF-15 |
HEXFET?Power MOSFET HEXFET㈢Power MOSFET ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
IRF610A |
Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IRLWI540A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRLWI520A IRFI740A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|