PART |
Description |
Maker |
R2486-04 R2486 R2486-01 R2486-02 R2486-03 |
POSITION-SENSITIVE PHOTOMULTIPLIER TUBES WITH CROSSED WIRE ANODES 位置灵敏光电倍增管带交叉钢丝阳极
|
Hamamatsu Photonics K.K. HAMAMATSU[Hamamatsu Corporation]
|
2SK508G-X-AE3-R 2SK508L-X-AE3-R |
HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
|
Unisonic Technologies
|
NJ30L |
Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier
|
INTERFET[InterFET Corporation]
|
NJ3600L |
Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier
|
INTERFET[InterFET Corporation]
|
2SK3476 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3078A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
2SK302 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications
|
TOSHIBA
|
2SK1771 |
Field Effect Transistor Silicon N-Channel MOS Type FM Tuner, VHF RF Amplifier Applications
|
TOSHIBA
|
2SK285407 2SK2854 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION
|
Toshiba Semiconductor
|
2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|