| PART |
Description |
Maker |
| RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6035DPP-E0 RJK6035DPP-E0-15 |
600V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6013DPE RJK6013DPE-00J3 RJK6013DPE12 RJK6013DPE |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6012DPP-E0 |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| RJL60S5DPE |
600V - 20A - SJ MOS FET
|
Renesas Technology
|
| 30ETH06 30ETH06-1 30ETH06S |
Hyperfast Rectifier
600V 30A HyperFast Discrete Diode in a TO-220AC package
600V 30A HyperFast Discrete Diode in a TO-262 package
600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
IRF[International Rectifier]
|
