| PART |
Description |
Maker |
| PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW
|
NXP Semiconductors
|
| PBSS5120T PBSS5120T215 |
20 V; 1 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd
20 V, 1 A PNP low VCEsat (BISS) transistor
20 V 1 A PNP low VCEsat (BISS) transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PBSS303PX |
30 V, 5.1 A PNP low VCEsat (BISS) transistor 30伏，6安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| 2PB1424 2PB1424115 |
20 V, 3 A PNP low VCEsat (BISS) transistor 20伏，3安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
NXP Semiconductors / Philips Semiconductors
|
| PBRN123Y PBRN123YK PBRN123YS PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
|
NXP Semiconductors
|
| PBRN113E |
NPN 800 mA 40 V BISS RETs
|
NXP Semiconductors
|
| PBSS5112PAP |
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV9040T09 |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 500 0.25安PNP高电压低饱和压降(BISS) 晶体
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBSS303PD PBSS303PD115 |
60 V, 3 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS
|
| PBLS2004D |
20 V PNP BISS loadswitch
|
NXP Semiconductors
|
| PBLS6001D |
60 V PNP BISS loadswitch
|
NXP Semiconductors
|
| PBLS2001S |
20 V PNP BISS loadswitch
|
NXP Semiconductors
|
