| PART |
Description |
Maker |
| 2SK2604 |
N CHANNEL MOS TYPE (HGIH SPEED/ HIGH VOLTAGE SWITCHIN/ SWITCHING REGULATOR APPLICATIONS)
N CHANNEL MOS TYPE (HGIH SPEED, HIGH VOLTAGE SWITCHIN, SWITCHING REGULATOR APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| AD260 AD260BND-5 AD260AND-0 AD260AND-1 AD260AND-2 |
High Speed, Logic Isolator with Power Transformer SPECIALTY INTERFACE CIRCUIT, PQIP22
High Speed/ Logic Isolator with Power Transformer
High Speed Logic Isolator with Power Transformer
40 MBd five channel digital isolator isolated power for Fieldbus, Microcontroller/peripheral interface and data transmission
|
Analog Devices, Inc.
AD[Analog Devices]
|
| FS30KMH-2 |
Power MOSFETs: FS Series, Low Voltage, 100V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Powerex Power Semiconductors
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| 2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，大电流开关，斩波调压器，DC - DC变换器和电机驱动应用
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| BUX41N |
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
| BUX20 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| 2SC2616 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2N6033 |
HIGH-CURRENT, HIGH-SPEED, HIGH-POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC2614 |
HIGH VOLTAGE HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
|
| BUX41N |
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
|
New Jersey Semi-Conduct...
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
