| PART |
Description |
Maker |
| EDI8L32128C12AI EDI8L32128C15AI EDI8L32128C20AI ED |
15ns; 5V power supply; 128K x 32 CMOS high speed static RAM
20ns; 5V power supply; 128K x 32 CMOS high speed static RAM
17ns; 5V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| BAP816 |
Dioda uniwersalna
Non-Volatile Static RAM (nvSRAM); Organization: 32x8; Density: 256KB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: 0° to 70°C
|
Ultra CEMI
|
| W24L01S-70LE W24L01S-70LI W24L01S-70LL W24L01B-55L |
SUBMINIATURE POWER RELAY
128K X 8 CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| 5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
|
Atmel
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns
(CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM）的
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C331 |
Sync SRAM - 3.3V
LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 4 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 4 ns, PQFP100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 3.3 128K的X 32/36管道爆裂同步SRAM
|
Alliance Semiconductor Corp...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
|
| EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
|
White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| WPS512K8C-20RJMB WPS512K8LB-15RJMB WPS512K8LB-25RJ |
512K x 8 SRAM, 20ns
512K x 8 SRAM, low power, 15ns
512K x 8 SRAM, low power, 25ns
512K x 8 SRAM, 15ns
512K x 8 SRAM, 25ns
|
White Electronic Designs
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
