| PART |
Description |
Maker |
| PSD501B1-12U PSD502B1-12U PSD513B1-12U PSD511B1-12 |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57Z30 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7250 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7054 with optional Total Dose Rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7160 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 500kRads
600V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; Similar to IRHN7C50SE with optional Total Dose Rating of 50kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA57260 with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ7130 with optional Total Dose Rating of 1000kRads
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package; A IRHNJ57234SE with Standard Packaging
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB770Z4 with Standard Packaging and Total Dose of 100K Rads (Si)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; JANS Certified device. Equivalent to IR Part Number IRHNA57260SE
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package; A IRH7250SE with Standard Packaging
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM9150 with optional Total Dose Rating of 300kRads
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9160 with optional Total Dose Rating of 300kRads 现场可编程外
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; A IRH9250 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package; A JANSR2N7382 with Standard Packaging 现场可编程外
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A JANSR2N7424 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ597130 with optional Total Dose Rating of 300kRads 现场可编程外
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7130 with optional Total Dose Rating of 300kRads 现场可编程外
Field-Programmable Peripheral 现场可编程外
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57034 with optional Total Dose Rating of 1000kRads 现场可编程外
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7Z60 with optional Total Dose Rating of 500kRads 现场可编程外
|
Fluke, Corp.
飞思卡尔半导体(中国)有限公司
Alliance Semiconductor, Corp.
Atmel, Corp.
Bourns, Inc.
|
| AM29C516A-1/BXC AM29C516A-1PC AM29C516-1PC AM29C51 |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57Z60 with optional Total Dose Rating of 1000kRads
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; A IRHN7250SE with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.; Similar to IRHNJ67130 with optional Total Dose rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package; A IRHN7130 with Standard Packaging
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; JANS Certified version of the IRHNA57Z60 with optional Total Dose Rating of 500kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7Z60 with optional Total Dose Rating of 300kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57Z60 with optional Total Dose Rating of 500kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ57Z30 with optional Total Dose Rating of 500kRads
Multiplier 乘数
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM7Z60 with Standard Packaging 乘数
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package; Similar to IRHMS597Z60 with optional Total Dose Rating of 300kRads 乘数
|
Rochester Electronics, LLC
AverLogic Technologies, Corp.
Vectron International, Inc.
|
| GSIONLDIRUH33P253B1M |
Low Dose Test Report
|
International Rectifier
|
| 5962-0153201QYX 5962D0153201QYX 5962L0153201QYA 59 |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Technology
|
| GSIONIRUH33P253B1M |
Total Ionizing Dose Test Report
|
International Rectifier
|
| GSELD-IRUH3301 |
Enhanced Low Dose Rate Sensitivity
|
International Rectifier
|
| MSK196RH-15 |
Low Dose Rate Hardened to 50 Krad(Si) (Method 1019.7 Condition D)
|
M.S. Kennedy Corporatio...
|
| AM29C943DE AM29C941PC AM29C941DC |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package; Similar to IRHG6110 with optional Total Dose Rating of 300kRads
100V Quad N-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ7110 with optional Total Dose Rating of 500kRads 10位D型锁存器
100V Quad P-Channel MOSFET in a 28-pin LCC package; A IRHQ9110 with Standard Packaging 10位D型锁存器
|
FCI
NXP Semiconductors N.V.
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
| 2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.
|
International Rectifier
|
