| PART |
Description |
Maker |
| UT54LVDS032-UPX 5962H9583401QXA 5962H9583401QXC 59 |
Quad receiver: SMD. QML class V. Lead finish factory option. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish hot solder dipped. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish gold. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish gold. Total dose 1E6 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish gold. Total dose 1E6 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Quad Receiver 四接收机
Triple 3-input positive-AND gates 14-PDIP 0 to 70
Quad receiver: SMD. QML class Q. Lead finish hot solder dipped. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish factory option. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish gold. Total dose 5E5 rad(Si).
|
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Circuit Techno...
|
| PSD501B1-12U PSD502B1-12U PSD513B1-12U PSD511B1-12 |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57Z30 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7250 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7054 with optional Total Dose Rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7160 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 500kRads
600V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; Similar to IRHN7C50SE with optional Total Dose Rating of 50kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA57260 with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ7130 with optional Total Dose Rating of 1000kRads
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package; A IRHNJ57234SE with Standard Packaging
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB770Z4 with Standard Packaging and Total Dose of 100K Rads (Si)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; JANS Certified device. Equivalent to IR Part Number IRHNA57260SE
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package; A IRH7250SE with Standard Packaging
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM9150 with optional Total Dose Rating of 300kRads
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9160 with optional Total Dose Rating of 300kRads 现场可编程外
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; A IRH9250 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package; A JANSR2N7382 with Standard Packaging 现场可编程外
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A JANSR2N7424 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ597130 with optional Total Dose Rating of 300kRads 现场可编程外
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7130 with optional Total Dose Rating of 300kRads 现场可编程外
Field-Programmable Peripheral 现场可编程外
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57034 with optional Total Dose Rating of 1000kRads 现场可编程外
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7Z60 with optional Total Dose Rating of 500kRads 现场可编程外
|
Fluke, Corp.
飞思卡尔半导体(中国)有限公司
Alliance Semiconductor, Corp.
Atmel, Corp.
Bourns, Inc.
|
| AM29C516A-1/BXC AM29C516A-1PC AM29C516-1PC AM29C51 |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57Z60 with optional Total Dose Rating of 1000kRads
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; A IRHN7250SE with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.; Similar to IRHNJ67130 with optional Total Dose rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package; A IRHN7130 with Standard Packaging
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; JANS Certified version of the IRHNA57Z60 with optional Total Dose Rating of 500kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7Z60 with optional Total Dose Rating of 300kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57Z60 with optional Total Dose Rating of 500kRads
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ57Z30 with optional Total Dose Rating of 500kRads
Multiplier 乘数
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM7Z60 with Standard Packaging 乘数
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package; Similar to IRHMS597Z60 with optional Total Dose Rating of 300kRads 乘数
|
Rochester Electronics, LLC
AverLogic Technologies, Corp.
Vectron International, Inc.
|
| UT28F256 UT28F256T-45UPX 5962F9689103QXA 5962F9689 |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
320 x 240 pixel format, LED or CFL Backlight
Recalibration Service for 2120B B&K Oscilloscope
Oscilloscope; Scope Type:Analog; Scope Bandwidth:30 MHz; Scope Channels:2 Scope; Calibrated:No; Rise Time:12ns; Sensitivity:5 mV/div to 5 V/div; Accuracy: /- 3 %; Resistance:1Mohm
Recalibration Service for 2125A B&K Oscilloscope
Radiation-Hardened 32K x 8 PROM 辐射加固32K的8胎膜早破
Recalibration Service for 2120B B&K Oscilloscope 辐射加固32K的8胎膜早破
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-Hardened 32K x 8 PROM
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
NEC, Corp.
Aeroflex Circuit Techno...
|
| 5962H9322603VZC 5962H9322603VZX 5962G9322603QXC 59 |
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation. Idle low transciver. Lead finish optional. Mil temp.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish gold. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish optional. Total dose 3E5 rads(Si).
|
Aeroflex Circuit Technology
|
| 5962R-0050501VTBDX 5962R-0050501VTBDC 5962R-005050 |
USART: SMD. Lead finish optional. QML class V. Total dose 3E5 rad(Si).
USART: SMD. Lead finish gold. QML class V. Total dose 3E5 rad(Si).
USART: SMD. Lead finish solder. QML class V. Total dose 3E5 rad(Si).
USART: SMD. Lead finish solder. QML class Q. Total dose 3E5 rad(Si).
USART: SMD. Lead finish gold. QML class Q. Total dose 3E5 rad(Si).
USART: SMD. Lead finish optional. QML class Q. Total dose 3E5 rad(Si).
|
Aeroflex Circuit Technology
|
| 5962F9583303VXX 5962F9583303VXC |
LVDS quad driver: SMD. Lead finish factory option. QML class V. Total dose 3E5rad(Si).
LVDS quad driver: SMD. Lead finish gold. QML class V. Total dose 3E5rad(Si).
|
Aeroflex Circuit Technology
|
| 5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)).
UT9Q512K32 16Megabit SRAM MCM
UT9Q512K32 16Megabit SRAM MCM
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
|
AEROFLEX[Aeroflex Circuit Technology]
|
| MSK496RH-15 |
Low Dose Rate Hardened to 50 Krad(Si) (Method 1019.7 Condition D)
|
M.S. Kennedy Corporatio...
|
| 5962RTBD02QYA 5962RTBD02QYC 5962RTBD02QYX 5962RTBD |
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish factory option. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish factory option. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 5E5 rad(Si).
|
Aeroflex Circuit Technology
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
| UT7C139C45GCX UT7C138C45GCA UT7C138C45WCC UT7C138C |
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx9 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx9 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx8 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx8 dual-port SRAM. Lead finish solder. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
4Kx8 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx8 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx8 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx9 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx9 dual-port SRAM. Lead finish optional. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx9 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
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AEROFLEX[Aeroflex Circuit Technology]
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