| PART |
Description |
Maker |
| A520GLUE0.25 A520GLUE0.5 |
ISOLIERZUBEHOER 250ML DOSE
ISOLIERZUBEHOER 0.5L DOSE ISOLIERZUBEHOER 0.5升剂
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Belden, Inc.
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| PSM-2C-1000B PSM-2C-10B PSM-2B-1000B PSM-2C-500B P |
9.5 MHz - 10.5 MHz, 0 deg - 90 deg RF/MICROWAVE COAXIAL MECHANICAL PH SHIFTER
100V Quad P-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ9110 with optional Total Dose Rating of 300kRads 模拟IC
Analog IC
250V Quad N-Channel MOSFET in a MO-036AB package; Similar to IRHG7214 with optional Total Dose Rating of 500kRads
PHASE SHIFTERS, MANUAL
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MERRIMAC INDUSTRIES INC
Ironwood Electronics
Merrimac Industries, Inc.
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| AM29C660B/BUA AM29C660/BZC AM29C660/BUA AM29C660C/ |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57Z30 with optional Total Dose Rating of 300kRads
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM9260 with Standard Packaging
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package; Similar to IRHNB7260 with optional Total Dose Rating of 1000kRads
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package; Similar to IRHY9130CM with optional Total Dose Rating of 300kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHLF770Z4 with optional Total Dose Rating of 300kRads
600V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package. Also available in Radiation Levels up to 300KRad.; A IRHY67C30CM with Standard Packaging
Error Detection & Correction (EDAC)
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA9160 with Standard Packaging
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| 5962-0153201QYX 5962D0153201QYX 5962L0153201QYA 59 |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Technology
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| 5962H0153501QXA 5962H0153501QXC 5962H0153501VXC 59 |
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class Q. Lead finish hot solder dipped.
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class Q. Lead finish gold.
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class V. Lead finish gold.
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class V. Lead finish factory option.
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class V. Lead finish hot solder dipped.
Deserializer. Lead finish hot solder dipped.
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Aeroflex Circuit Technology
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| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| MSK196RH-15 |
Low Dose Rate Hardened to 50 Krad(Si) (Method 1019.7 Condition D)
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M.S. Kennedy Corporatio...
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| 5962RTBD02QYA 5962RTBD02QYC 5962RTBD02QYX 5962RTBD |
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish factory option. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish factory option. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 5E5 rad(Si).
|
Aeroflex Circuit Technology
|
| AM29C943DE AM29C941PC AM29C941DC |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package; Similar to IRHG6110 with optional Total Dose Rating of 300kRads
100V Quad N-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ7110 with optional Total Dose Rating of 500kRads 10位D型锁存器
100V Quad P-Channel MOSFET in a 28-pin LCC package; A IRHQ9110 with Standard Packaging 10位D型锁存器
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FCI
NXP Semiconductors N.V.
|
| UT7C139C45GCX UT7C138C45GCA UT7C138C45WCC UT7C138C |
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx9 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx9 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx8 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx8 dual-port SRAM. Lead finish solder. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
4Kx8 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx8 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx8 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx9 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx9 dual-port SRAM. Lead finish optional. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx9 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
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AEROFLEX[Aeroflex Circuit Technology]
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| IS-1825ASRH |
Dual Output PWM, High Speed, Single Event Rad-Hard and Total Dose Hardened
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Intersil
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