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A520GLUE025 - ISOLIERZUBEHOER 250ML DOSE ISOLIERZUBEHOER 0.5L DOSE ISOLIERZUBEHOER 0.5升剂

A520GLUE025_2884774.PDF Datasheet


Part No.	A520GLUE0.25 A520GLUE0.5
Description	ISOLIERZUBEHOER 250ML DOSE ISOLIERZUBEHOER 0.5L DOSE ISOLIERZUBEHOER 0.5升剂
File Size	160.41K / 3 Page
Maker	Belden, Inc.
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AM29C516A-1/BXC AM29C516A-1PC AM29C516-1PC AM29C51	30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57Z60 with optional Total Dose Rating of 1000kRads 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; A IRHN7250SE with Standard Packaging 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.; Similar to IRHNJ67130 with optional Total Dose rating of 300kRads 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package; A IRHN7130 with Standard Packaging 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; JANS Certified version of the IRHNA57Z60 with optional Total Dose Rating of 500kRads 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7Z60 with optional Total Dose Rating of 300kRads 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57Z60 with optional Total Dose Rating of 500kRads 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ57Z30 with optional Total Dose Rating of 500kRads Multiplier 乘数 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM7Z60 with Standard Packaging 乘数 -30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package; Similar to IRHMS597Z60 with optional Total Dose Rating of 300kRads 乘数	Rochester Electronics, LLC AverLogic Technologies, Corp. Vectron International, Inc.
5962F9583403VXX 5962F9583403VXC 5962F9583403VXA	LVDS quad receiver:SMD. QML class V. Total dose 3E5 rad(Si). Lead finish factory option. LVDS quad receiver:SMD. QML class V. Total dose 3E5 rad(Si). Lead finish gold. LVDS quad receiver:SMD. QML class V. Total dose 3E5 rad(Si). Lead finish not solder dipped.	Aeroflex Circuit Technology
5962R-0050501VTBDX 5962R-0050501VTBDC 5962R-005050	USART: SMD. Lead finish optional. QML class V. Total dose 3E5 rad(Si). USART: SMD. Lead finish gold. QML class V. Total dose 3E5 rad(Si). USART: SMD. Lead finish solder. QML class V. Total dose 3E5 rad(Si). USART: SMD. Lead finish solder. QML class Q. Total dose 3E5 rad(Si). USART: SMD. Lead finish gold. QML class Q. Total dose 3E5 rad(Si). USART: SMD. Lead finish optional. QML class Q. Total dose 3E5 rad(Si).	Aeroflex Circuit Technology
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5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59	512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)	Aeroflex Circuit Technology
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UT7C139C45GCX UT7C138C45GCA UT7C138C45WCC UT7C138C	Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). 4Kx9 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx9 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx8 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx8 dual-port SRAM. Lead finish solder. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 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Lead finish gold. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. 4Kx8 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx8 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx8 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx9 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx9 dual-port SRAM. Lead finish optional. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). 4Kx9 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).	AEROFLEX[Aeroflex Circuit Technology]
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