| PART |
Description |
Maker |
| PSD501B1-12U PSD502B1-12U PSD513B1-12U PSD511B1-12 |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57Z30 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7250 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7054 with optional Total Dose Rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7160 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 500kRads
600V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; Similar to IRHN7C50SE with optional Total Dose Rating of 50kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA57260 with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ7130 with optional Total Dose Rating of 1000kRads
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package; A IRHNJ57234SE with Standard Packaging
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB770Z4 with Standard Packaging and Total Dose of 100K Rads (Si)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; JANS Certified device. Equivalent to IR Part Number IRHNA57260SE
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package; A IRH7250SE with Standard Packaging
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM9150 with optional Total Dose Rating of 300kRads
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9160 with optional Total Dose Rating of 300kRads 现场可编程外
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; A IRH9250 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package; A JANSR2N7382 with Standard Packaging 现场可编程外
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A JANSR2N7424 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ597130 with optional Total Dose Rating of 300kRads 现场可编程外
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7130 with optional Total Dose Rating of 300kRads 现场可编程外
Field-Programmable Peripheral 现场可编程外
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57034 with optional Total Dose Rating of 1000kRads 现场可编程外
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7Z60 with optional Total Dose Rating of 500kRads 现场可编程外
|
Fluke, Corp.
飞思卡尔半导体(中国)有限公司
Alliance Semiconductor, Corp.
Atmel, Corp.
Bourns, Inc.
|
| AM29C833PC AM29C833A/B3A AM29C853A/B3A AM29C853/B3 |
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 300kRads
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH9250 with optional Total Dose Rating of 300kRads
60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package; A IRHLF7970Z4 with Standard Packaging
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 300kRads
150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package also available with Total Dose Rating of 300kRads; A IRHYS67134CM with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57130 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package; Similar to IRHMJ7250 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 1000kRads
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package; Similar to IRHYS597Z30CM with optional Total Dose Rating of 300kRads 位总线收发
60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB7970Z4 with Standard Packaging 位总线收发
Single 8-bit Bus Transceiver 位总线收发
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM9130 with Standard Packaging 位总线收发
|
Vectron International, Inc.
Advanced Micro Devices, Inc.
EPCOS AG
3M Company
|
| PSM-2-10B PSM-2-500B PSM-2-010B |
60V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET in a MO-036AB package; Similar to IRHLG770Z4 with optional total dose rating of 300kRads
PHASE SHIFTERS, MANUAL
100V Quad N-Channel MOSFET in a MO-036AB package; Similar to IRHG7110 with optional Total Dose Rating of 300kRads
|
Merrimac Industries, Inc.
|
| 5962H9322603VZC 5962H9322603VZX 5962G9322603QXC 59 |
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation. Idle low transciver. Lead finish optional. Mil temp.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish gold. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish optional. Total dose 3E5 rads(Si).
|
Aeroflex Circuit Technology
|
| 5962F-9865102QYX 5962H-9865102QYX 5962H-9865102QYC |
Low voltage quad driver: SMD. Lead finish factory option. QML class Q. Total dose 1E5 rad(Si).
Low voltage quad driver: SMD. Lead finish factory option. QML class Q. Total dose 1E6 rad(Si).
Low voltage quad driver: SMD. Lead finish gold. QML class Q. Total dose 1E6 rad(Si).
Low voltage quad driver: SMD. Lead finish gold. QML class V. Total dose 1E6 rad(Si).
Low voltage quad driver: SMD. Lead finish factory option. QML class V. Total dose 1E6 rad(Si).
Low voltage quad driver: SMD. Lead finish factory option. QML class V. Total dose 1E5 rad(Si).
Low voltage quad driver: SMD. Lead finish hot solder dipped. QML class Q. Total dose 1E5 rad(Si).
Low voltage quad driver: SMD. Lead finish hot solder dipped. QML class Q. Total dose 5E5 rad(Si).
Low voltage quad driver: SMD. Lead finish factory option. QML class Q. Total dose 5E5 rad(Si).
Low voltage quad driver: SMD. Lead finish factory option. QML class V. Total dose 5E5 rad(Si).
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Aeroflex Circuit Technology
|
| GSIONIRUH33PA13B20K |
Total Ionizing Dose Test Report
|
International Rectifier
|
| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| 5962H0254301QXA 5962H0254301QXC 5962H0254301VXA 59 |
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class Q. Lead finish solder. Total dose 1E6 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class Q. Lead finish gold. Total dose 1E6 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish solder. Total dose 1E6 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish gold. Total dose 1E6 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class Q. Lead finish gold. Total dose 1E5 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish solder. Total dose 1E5 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish gold. Total dose 1E5 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver. CMOS compatible I/O level. Lead finish solder.
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class Q. Lead finish gold. Total dose 3E5 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish solder. Total dose 5E5 rad(Si).
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Aeroflex Circuit Technology
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| 5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 59 |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Technology
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