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A520GLUE025 - ISOLIERZUBEHOER 250ML DOSE ISOLIERZUBEHOER 0.5L DOSE ISOLIERZUBEHOER 0.5升剂

A520GLUE025_2884774.PDF Datasheet


Part No.	A520GLUE0.25 A520GLUE0.5
Description	ISOLIERZUBEHOER 250ML DOSE ISOLIERZUBEHOER 0.5L DOSE ISOLIERZUBEHOER 0.5升剂
File Size	160.41K / 3 Page
Maker	Belden, Inc.
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PART	Description	Maker
A520GLUE0.25 A520GLUE0.5	ISOLIERZUBEHOER 250ML DOSE ISOLIERZUBEHOER 0.5L DOSE ISOLIERZUBEHOER 0.5升剂	Belden, Inc.
AM29C833PC AM29C833A/B3A AM29C853A/B3A AM29C853/B3	60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 300kRads -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH9250 with optional Total Dose Rating of 300kRads 60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package; A IRHLF7970Z4 with Standard Packaging 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 300kRads 150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package also available with Total Dose Rating of 300kRads; A IRHYS67134CM with Standard Packaging 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57130 with optional Total Dose Rating of 500kRads 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package; Similar to IRHMJ7250 with optional Total Dose Rating of 500kRads 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 1000kRads -30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package; Similar to IRHYS597Z30CM with optional Total Dose Rating of 300kRads 位总线收发 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB7970Z4 with Standard Packaging 位总线收发 Single 8-bit Bus Transceiver 位总线收发 -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM9130 with Standard Packaging 位总线收发	Vectron International, Inc. Advanced Micro Devices, Inc. EPCOS AG 3M Company
PSM-2C-1000B PSM-2C-10B PSM-2B-1000B PSM-2C-500B P	9.5 MHz - 10.5 MHz, 0 deg - 90 deg RF/MICROWAVE COAXIAL MECHANICAL PH SHIFTER 100V Quad P-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ9110 with optional Total Dose Rating of 300kRads 模拟IC Analog IC 250V Quad N-Channel MOSFET in a MO-036AB package; Similar to IRHG7214 with optional Total Dose Rating of 500kRads PHASE SHIFTERS, MANUAL	MERRIMAC INDUSTRIES INC Ironwood Electronics Merrimac Industries, Inc.
GSIONIRUH33PA13B20K	Total Ionizing Dose Test Report	International Rectifier
5962F9583303VXX 5962F9583303VXC	LVDS quad driver: SMD. Lead finish factory option. QML class V. Total dose 3E5rad(Si). LVDS quad driver: SMD. Lead finish gold. QML class V. Total dose 3E5rad(Si).	Aeroflex Circuit Technology
5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59	512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)	Aeroflex Circuit Technology
5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX	256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).	Aeroflex Circuit Technology
MSK496RH-15	Low Dose Rate Hardened to 50 Krad(Si) (Method 1019.7 Condition D)	M.S. Kennedy Corporatio...
AM29C943DE AM29C941PC AM29C941DC	100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package; Similar to IRHG6110 with optional Total Dose Rating of 300kRads 100V Quad N-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ7110 with optional Total Dose Rating of 500kRads 10位D型锁存器 100V Quad P-Channel MOSFET in a 28-pin LCC package; A IRHQ9110 with Standard Packaging 10位D型锁存器	FCI NXP Semiconductors N.V.
5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.	Aeroflex Circuit Technology
5962H9475407QLC 5962F9475401QLA 5962F9475401QLC 59	Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class G. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish gold.	Aeroflex Circuit Technology

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