PART |
Description |
Maker |
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
RJK0346DPA RJK0346DPA-00-J0 |
65 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device 7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device SANYO SEMICONDUCTOR CO LTD
|
MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
HAT2070R |
12 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
2SK2903 2SK2903-01MR |
N-CHANNEL SILICON POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 50 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd.
|
RQJ0602EGDQS RQJ0602EGDQSTL-E |
1.5 A, 60 V, 0.868 ohm, P-CHANNEL, Si, POWER, MOSFET LEAD FREE, SC-62, UPAK-3 Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc. Renesas Electronics Corporation
|
RJK6006DPD RJK6006DPD-00-J2 RJK6006DPD-15 |
Silicon N Channel MOS FET High Speed Power Switching 5 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET MP-3A, SC-63, 3 PIN
|
Renesas Electronics Corporation
|
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