| PART |
Description |
Maker |
| MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MICA RoHS Compliant: No
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd.
http://
|
| MX26L3220 MX26L3220XBI-12 MX26L3220XBI-90 MX26L322 |
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
| MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32
128K X 8 EEPROM 12V, 150 ns, PDSO32
128K X 8 EEPROM 12V, 150 ns, PQCC32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| PEB2045 PEF2045 PEB2045-N PEB2045-P PEF2045-N PEF2 |
Memory Time Switch CMOS (MTSC) TELECOM, DIGITAL TIME SWITCH, PDIP40
|
SIEMENS AG
SIEMENS A G
|
| UPD75P66 UPD75P56 UPD75P66G-511 UPD75P56CS-001 UPD |
4-Bit, Single-Chip, One-Time Programmable (OTP) CMOS Microcomputer With Comparator
(UPD75P56 / UPD75P66) 4-Bit Single-Chip One-Time Programmable CMOS Microcomputers
|
NEC[NEC]
NEC Electronics
|
| MCP6S22-I/MS MCP6S22-I/P MCP6S22-I/SN MCP6S26-I/P |
Designs with multiple signals Designs that need to be calibrated over time and temperature AutomotiveInstrumentationIndustrial applications
The MCP6S21, MCP6S22, MCP6S26, and MCP6S28 Programmable Gain Amplifiers offer 1, 2, 6 or 8 input channels respectively and eight ...
|
Microchip
|
| TC544096 |
CMOS One Time Programmable ROM
|
Toshiba
|
| CDP6818A |
CMOS Real Time Clock
|
RCA Solid State
|
| 5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM. 15ns access time. Lead finish hot gold.
512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped.
512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow.
512K x 18 SRAM. 15ns access time. Lead finish factory option.
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
