PART |
Description |
Maker |
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM Low Power SDRAM Industrial SDRAM 2M x 4 BANKS x 16 BIT SDRAM DRAM - Datasheet Reference
|
Winbond Electronics Corp WINBOND[Winbond]
|
IBM0364404CT3C-75A IBM03644B4CT3C-75A IBM0364404CT |
x8 SDRAM x16 SDRAM x4 SDRAM Module x4内存模块
|
Ecliptek, Corp.
|
HY57V28820HCT-H HY57V28820HCLT-K |
x8 SDRAM From old datasheet system SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S161622H |
16Mb H-die SDRAM Specification IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位,1个等级)
|
Elpida Memory, Inc.
|