| PART |
Description |
Maker |
| MT29F4G08ABADAH4 MT29F4G16ABBDAH4 MT29F8G08ADADAH4 |
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
|
Micron Technology
|
| K4B4G1646B |
4Gb B-die DDR3 SDRAM
|
Samsung
|
| M393B1G73BH0 M393B1G70BH0 |
240pin Registered DIMM based on 4Gb B-die
|
Samsung semiconductor
|
| HMT451R7AFR8A-RD HMT451R7AFR8A-H9 HMT451R7AFR8A-PB |
DDR3L SDRAM Registered DIMM Based on 4Gb A-die
|
Hynix Semiconductor
|
| HMT425S6AFR6A-RD HMT425S6AFR6A-H9 HMT425S6AFR6A-G7 |
DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb A-die
|
Hynix Semiconductor
|
| HMTA8GL7AHR4C-PB HMTA8GL7AHR4A HMTA8GL7AHR4A-H9 |
DDR3(L) SDRAM Load Reduced DIMM Based on 4Gb A-die
|
Hynix Semiconductor
|
| HMT84GL7AMR4C-RD HMT84GL7AMR4C-PB HMT84GL7AMR4C-H9 |
DDR3(L) SDRAM Load Reduced DIMM Based on 4Gb A-die
|
Hynix Semiconductor
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TS2GMP820 |
2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| TS512MUFM-V TS1GUFM-V TS2GUFM-V TS4GUFM-V |
512M~4GB USB Flash Module(Vertical)
|
Transcend Information. Inc.
|
| AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F |
1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30
Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30
LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
|
ADVANCED MICRO DEVICES INC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
