PART |
Description |
Maker |
IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate IGBT 0.5 A @ 25 600 V From old datasheet system
|
ONSEMI[ON Semiconductor]
|
IRG4BC20KDPBF IRG4BC20KDPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAGAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
IRGS4045DPBF IRGS4045DPDF IRGS4045DTRLPBF IRGS4045 |
INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
IRG4PSC71K-15 |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
MGP15N60U |
Insulated Gate Bipolar Transistor
|
MOTOROLA[Motorola, Inc]
|
MP6753 |
INSULATED GATE BIPOLAR TRANSISTOR
|
Toshiba Semiconductor
|