PART |
Description |
Maker |
IRKLF132 2213 IRKHF152-04HL IRKLF132-08HL IRKLF152 |
INT-A-pak Power Modules(可控二极H结构INT-A-pak功率模块) 相依甲柏功率模块(可控硅/二极结构相依甲柏功率模块 INT-A-pak Power Modules(可控可控L结构INT-A-pak功率模块) INT-A-pak Power Modules(可控二极管H结构INT-A-pak功率模块) From old datasheet system FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
|
International Rectifier, Corp.
|
VBO45-12NO7 VBO45-18NO7 VBO45-08NO7 VBO45-14NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
VBO130-12NO7 VBO130-08NO7 VBO130-16NO7 VBO130-14NO |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
VUO85-16NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
MDD312-12N1 L102 MDD312-18N1 MDD312-14N1 MDD312-16 |
Thyristor and Rectifiers Modules High Power Diode Modules CAT6A PLENUM, GREEN, SPOOBULK CABLE
|
IXYS Corporation
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块00安培V的,快速可控硅/二极结构磁共甲柏功率模块 200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块00安培2V的,快速可控硅/二极结构磁共甲柏功率模块 200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块200安培4V电压,快速可控硅/可控结构磁共甲柏功率模块 200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块200安培2V的,快速可控硅/可控结构磁共甲柏功率模块 200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE TV 100C 100#22D SKT RECP Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MDD220-18N1 MDD220 MDD220-08N1 MDD220-12N1 MDD220- |
High Power Diode Modules Thyristor and Rectifiers Modules
|
IXYS[IXYS Corporation]
|
VSKDU162_12PBF VSKDU162 VSKDU162/12PBF |
HEXFRED? Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules) HEXFRED庐 Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules) HEXFRED㈢ Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules)
|
Vishay Siliconix
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