PART |
Description |
Maker |
HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
HITACHI[Hitachi Semiconductor]
|
K9K2G08U0A |
256M x 8 Bit NAND Flash Memory
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Samsung Electronic Samsung semiconductor
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
S29GL128P90TFCR10 S29GL512P10TFIR20 S29GL256P90FAI |
128M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 512M X 1 FLASH 3V PROM, 100 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 90 ns, PBGA64 256M X 1 FLASH 3V PROM, 90 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 1G X 1 FLASH 3V PROM, 110 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 256M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 110 ns, PBGA64 1G X 1 FLASH 3V PROM, 110 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 512M X 1 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 100 ns, PBGA64 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 1G X 1 FLASH 3V PROM, 120 ns, PDSO56 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion, Inc. SPANSION LLC
|
K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
W25Q256FVEIQ W25Q256FVBIF W25Q256FVBIG W25Q256FVCI |
3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
W25Q256JVBIQ W25Q256JVEIQ W25Q256JVCIQ W25Q256JVFI |
3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
|
Winbond
|
UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Silicon NPN epitaxial planar type
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory 90ns 2M-bit CMOS flash memory 70ns 2M-bit CMOS flash memory 1 Megabit CMOS Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http:// CATALYST[Catalyst Semiconductor]
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
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FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
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