| PART |
Description |
Maker |
| CLY2 |
High Power Packaged GaAs FET; 23.5 dBm
|
TriQuint Semiconductor
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| PS7122AL-2B-E3 PS7122AL-1B-E4 PS7122AL-1B-E3 PS712 |
3 Phase Driver, Separate High and Low Side Inputs, Overcurrent Comparator, Latching Fault Logic, Fault Clear Input, Synchronized Shutdown Input, 200ns Deadtime in a 28-pin DIP package; A IR2233 packaged in a 28-Lead PDIP
FET-OUTPUT OPTOCOUPLER
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 14-pin DIP package; A IR21064 packaged in a 14-Lead SOIC
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 14-pin DIP package; A IR21064 packaged in a 14-Lead PDIP
Half Bridge Driver, Single Input Plus Inverting Shutdown Pin, Fixed 520ns Deadtime in a 8-pin DIP package; A IR2104 packaged in a Lead-Free 8-Lead SOIC
Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器)
场效应管输出光耦合
3 Phase Driver, Separate High and Low Side Inputs, Overcurrent Comparator, Latching Fault Logic, Fault Clear Input, Synchronized Shutdown Input, 200ns Deadtime in a 28-pin DIP package; A IR2235 packaged in a 28-Lead PDIP
Dual Low Side Driver, Inverting Input in a 8-pin DIP package; A IR4426 packaged in a 8-Lead PDIP
|
NEC Corp.
Atmel, Corp.
NEC, Corp.
|
| FLL21E135IX |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL400IK-2C |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
|
