| PART |
Description |
Maker |
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| HN7G01FU |
Multi Chip Discrete Device Power Management Switch Application Driver Circuit Application Interface Circuit Application
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| HN2E04F |
Multi-chip discrete device (PNP SW diode)
|
TOSHIBA
|
| CX06827 |
SCXXD V.92 / V.34 / V.32 Data Modem Device With Discrete Daa / External ROM/ram
|
Conexant Systems
|
| HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| SYC130 NEC256 SHC130 SEC130 SGC130 SRC130 NEC250 S |
LED Displays
Optoelectronic
From old datasheet system
Intel® 82566MC Gigabit Ethernet PHY, Single Port, Pb-Free 2LI, FCBGA, Tray
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0659-0 05; No. of Positions: 18; Connector Type: Wire
(degrees C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Inch type screw; MIL-C-24308
C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Locking device with rectangular mating locking base; Through hole
C): -55 to 85; Generic Name: D-SUB; General Description: Receptacle; Right angle; Field-mounting locking device; PCB locking clip; MIL-C-24308
Optoelectronic 光电
|
IDEA
NEC
AME, Inc.
Sanken Electric Co., Ltd.
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
