| PART |
Description |
Maker |
| MA5114 |
Radiation hard 1024x4 Bit Static RAM
|
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| UPB100422D-10 UPB100422B-10 |
256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
|
NEC
|
| UPB100474ABH-6 UPB100474AD-5 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 5 ns.
|
NEC
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| UT6164CJC-10 UT6164CJC-12 UT6164CJC-15 |
Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM
Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM
Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM
|
UTRON Technology
|
| UT62256CLS-35LE UT62256CLS-70LE UT62256CLS-70LLE U |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM
Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| 5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
| MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW.
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW.
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
| HM-6642/883 |
PROM, 512x8 CMOS, high speed, low power, Fast Access Time 120/200ns
|
Intersil Corporation
|
| M38513M4 M38513M4-C56FP 3851GROUP M38512M4 M38513M |
Single-chip 8-bit CMOS microcomputer. PROM 16K bytes, RAM 512 bytes. One time PROM version.
Single-chip 8-bit CMOS microcomputer. PROM 24K bytes, RAM 640 bytes. One time PROM version.
Single Chip 8-Bit CMOS Microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
