| PART |
Description |
Maker |
| 2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| S-AU82L |
FM RF POWER AMPLIFIER MODULE for UHF BAND
|
Toshiba Semiconductor
|
| 2SC2173 |
UHF Band Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2643 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| EC3H06B |
UHF to S Band Low-Noise Amplifier and OSC Applications 超高频的S波段低噪声放大器和OSC应用
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| KGF2511 |
Midium Power Amplifier for UHF band
From old datasheet system
|
OKI
|
| MGF7169C 7169CT_N |
From old datasheet system
UHF BAND GaAs POWER AMPLIFIER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AFS5-10951175-09-10P-5 AFS42-04400510-07-10P-44 AF |
10950 MHz - 11750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1400 MHz - 1700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6700 MHz - 7100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
700 MHz - 800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
