PART |
Description |
Maker |
BB304A Q62702-B118 SIEMENSAG-BB304A |
From old datasheet system Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 42 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Siemens Group
|
MA840 MA2C840 |
Variable Capacitance Diodes VHF-UHF BAND, 13.25 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
PANASONIC CORP Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode From old datasheet system
|
NXP Semiconductors Philipss
|
KV1471K KV1471KA KV1471KTR |
VARIABLE CAPACITANCE DIODE UHF BAND, 35.6 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE
|
TOKO, Inc. TOKO Inc TOKO[TOKO, Inc]
|
BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE High Q Hyperabrupt Tuning Varactors L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
HVD372B HVD372B06 HVD372B-06 |
Variable Capacitance Diode for VCO 16 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Renesas Electronics Corporation
|
1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
1N4800A 1N4798 |
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 68 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
|