| PART |
Description |
Maker |
| AS1506-BTDT-10 AS1506-BTDT-100 AS1506-BTDT-50 |
256-Tap Digital Potentiometer with SPI Interface and High Endurance EEPROM
|
austriamicrosystems AG
|
| AS1506-50 AS1506-10 AS1506-100 |
256-Tap Digital Potentiometer with SPI Interface and High Endurance EEPROM
|
austriamicrosystems AG
|
| AS1507-BTDT-10 AS1507-BTDT-100 AS1507-100 AS1507-5 |
Dual 256-Tap Digital Potentiometer with SPI Interface and High Endurance EEPROM
|
http://
austriamicrosystems AG
|
| M35101 6225 |
Contactless Memory Card IC 13.56 MHz, 2048-bit High Endurance EEPROM
From old datasheet system
|
STMicro
|
| ST1305B ST1305B-D10 ST1305B-D15 ST1305B-W4 |
Memory Card IC 192 bit High Endurance EEPROM With Secure Logic Access Control
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| DS1330YLPM-100 DS1330YLPM-70 |
32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDFP34
32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDFP34
32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 LOW PROFILE, SMT-34
|
Maxim Integrated Products, Inc.
|
| AN537 |
Everything a System Engineer Needs to Know About Serial EEPROM Endurance 一切系统工程师需要了解串行EEPROM耐力
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| P11C68-35 P10C68-35CG P10C68-35IG P10C68-IG P10C68 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM 的CMOS / SNOS非易失性SRAM的高性能8亩8非易失性静态RAM
|
Zarlink Semiconductor Inc.
Zarlink Semiconductor, Inc.
|
| DS1645YLPM-70-IND DS1645YLPM-100IND DS1645YLPM-70I |
128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDFP34
128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DFP34
128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DFP34
|
Maxim Integrated Products, Inc.
|
