| PART |
Description |
Maker |
| XN04215 XN4215 |
Composite Device - Composite Transistors
Silicon NPN epitaxial planer transistor
|
PANASONIC[Panasonic Semiconductor]
|
| RT3K44M |
Composite Transistor For high speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
| XN01601 XN1601 XN01601XN1601 |
Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
Composite Device - Composite Transistors
|
PANASONIC[Panasonic Semiconductor]
|
| XN06435 XN06435XN6435 XN6435 |
Composite Device - Composite Transistors
From old datasheet system
XN06435（XN6435-复合晶体
|
Panasonic
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| RT3U33M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3Y97M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3J11M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3K33M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| XN04114 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN6214 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Panasonic, Corp.
|
