| PART |
Description |
Maker |
| W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp.
Toshiba, Corp.
|
| TS1GJF2A |
1GB USB2.0 JetFlash垄莽2A
1GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
Transcend Information. ...
|
| HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
| H5TQ1G63DFR-12C H5TQ1G63DFR-N0C H5TQ1G63DFR-11C |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| TS1GJFV33 |
1GB USB2.0 JetFlash鈩33
|
Transcend Information. Inc.
|
| TS1GJFV30 |
1GB USB2.0 JetFlash鈩30
|
Transcend Information. Inc.
|
| H5TQ1G63DFRG7J H5TQ1G63DFRG7L H5TQ1G63DFRH9I H5TQ1 |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| TS1GJFT3 |
1GB USB2.0 JetFlash T3
|
Transcend Information. Inc.
|
| HY27UA081G1M HY27SA161G1M HY27SA081G1M |
NAND Flash - 1Gb
|
Hynix Semiconductor
|
| H5PS1G63JFR H5PS1G63JFRC4C H5PS1G63JFRC4I H5PS1G63 |
1Gb DDR2 SDRAM
|
Hynix Semiconductor
|
| H5TC1G63BFR H5TC1G43BFR H5TC1G83BFR |
1Gb DDR3L SDRAM
|
Hynix Semiconductor
|
