| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| 2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SK2545 |
FET Silicon N Channel Mos Type(for High speed, High Voltage Switching)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3290 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ575 |
Silicon P Channel MOS FET High Speed Switching
|
Hitachi Semiconductor
|
| FW306 |
N- Channel Silicon MOS FET High Speed Switching
|
Sanyo Semicon Device
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3289 |
Silicon N Channel MOS FET High Speed Switching
|
Hitachi Semiconductor
|
