| PART |
Description |
Maker |
| HD74ALVC2G04 |
From old datasheet system
Low voltage and high speed operation is suitable for the battery powered products
Triple Inverter Buffers
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SK1254S |
N-Channel MOSFET
Low on-resistance High speed switching Suitable for switching regulator and DC-DC converter
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| HCPL-901J HCPL-900J HCPL-9031 HCPL-902J HCPL-9030 |
SPECIAL
HCPL-0931 · High Speed Digital Isolator
HCPL-0930 · High Speed Digital Isolator
HCPL-092J · High Speed Digital Isolator
HCPL-091J · High Speed Digital Isolator
HCPL-090J · High Speed Digital Isolator
HCPL-0900 · High Speed Digital Isolator
HCPL-9000 · High Speed Digital Isolator
HCPL-9030 · High Speed Digital Isolator
HCPL-902J · High Speed Digital Isolator
HCPL-9031 · High Speed Digital Isolator
HCPL-900J · High Speed Digital Isolator
HCPL-901J · High Speed Digital Isolator
|
Agilent (Hewlett-Packard)
|
| USB3320 |
Highly Integrated Full Featured Hi-Speed USB 2.0 ULPI Transceiver
|
Microchip Technology
|
| ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT |
High speed 1 Megabit monolithic FLASH. Speed 150ns.
High speed 1 Megabit monolithic FLASH. Speed 90ns.
High speed 1 Megabit monolithic FLASH. Speed 70ns.
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH
High speed 1 Megabit monolithic FLASH. Speed 60ns.
High speed 1 Megabit monolithic FLASH. Speed 120ns.
|
AEROFLEX[Aeroflex Circuit Technology]
|
| USB3320C-EZK USB3320C-EZK-TR |
DATACOM, INTERFACE CIRCUIT, QCC32 5 X 5 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, QFN-32
Highly Integrated Full Featured Hi-Speed USB 2.0 ULPI Transceiver
|
SMSC Corporation
SMSC, Corp.
Microchip Technology
|
| FIDA28-80 FID64G-80 FID32G-80 FID16G-80 FID08G-80 |
Suitable for high demanding applications
|
Axiomtek Co., Ltd.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| C1608X5R1C225M GRM1885C1E102JA01D GRM1885C1H221JA0 |
16A HIGHLY INTERGRATED SUPLRBUCK
4A HIGHLY INTEGRATED SUPLRBUCK
|
International Rectifier
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFN37 BFN39 Q62702-F1305 Q62702-F1304 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HRW0202A |
Low forward voltage drop and suitable for high effifiency rectifying
|
TY Semiconductor Co., Ltd
|
