| PART |
Description |
Maker |
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM |
1400-2000 MHz, low noise amplifier
Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Low Noise Amplifier 1400 - 2000 MHz
1400-1520 MHz, low noise amplifier
|
MACOM[Tyco Electronics]
MA-Com
|
| 2SK117 E001317 |
From old datasheet system
LOW NOISE AUDIO AMPLIFIER APPLICATONS
N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| MAX2650 MAX2650EUS-T |
DC-to-Microwave / 5V Low-Noise Amplifier
DC-to-Microwave, 5V Low-Noise Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125
Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|
| HS9-OP470ARH-Q HS-OP470AR HS-OP470ARH 5962R9853301 |
16 AMP SPDT MINIATURE POWER RELAY
Radiation Hardened, Very Low Noise
Quad Operational Amplifier(抗辐射低噪声四路运算放大
Radiation Hardened, Very Low Noise Quad Operational Amplifier
Radiation Hardened/ Very Low Noise Quad Operational Amplifier
|
Intersil Corporation
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| 5962R9569001VXC 5962R9569001V9A HS1-5104ARH/PROTO |
Op Amp, Quad 8MHz, Low Noise, Slew Rate 2V/s, Rad-Hard
Radiation Hardened Low Noise Quad Operational Amplifier
|
http://
Intersil Corporation
|
| 2SC4095 2SC4095-T1 2SC4095R 2SC4095R-T2 2SC4095R-T |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
NEC[NEC]
|
| 2N3799X |
PNP,Low Noise Amplifier Transistor(低噪声、放大器型PNP晶体
PNP LOW NOISE AMPLIFIER TRANSISTOR
PNP, LOW NOISE AMPLIFIER TRANSISTOR
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
