| PART |
Description |
Maker |
| XS2F-D421-DC0-A |
Round Water-resistant Connectors (M12)
|
Omron Electronics LLC
|
| 15-000200 15-000150 |
WATER RESISTANT SCREEN CAP
|
CONEC Elektronische Bauelemente GmbH
|
| HFB-R |
HFB In-Line Water-Resistant Series
|
Cooper Bussmann, Inc.
|
| PV6 |
Vandal and Water Resistant Long Life Expectancy
|
lambind
|
| FC/GBESM1300NM10KM |
Transceivers by Form-factor MSA - iSFP™ - 1300 nm; 2.125/ 1.0625 Gbit/s Fibre Channel/ 1.25 Gigabit Ethernet Trx; LC-Connecto
|
Infineon
|
| SKRCACD010 |
9mm Diameter Water-proof with Round Terminals (Radial Type)
|
ALPS ELECTRIC CO.,LTD.
|
| 1T405 |
Vandal Resistant Pushbutton Switch; Illumination:Illuminated; Actuator Style:Round; Actuator Diameter:22mm; Circuitry:SPST; Switch Operation:Push to Make; Switch Terminals:Solder Lug; Contact Current Max:50mA
Variable Capacitance Diode
|
SONY[Sony Corporation]
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| S1P2655A03 S1P2655A05 S1P2655A01 S1P2655A02 S1P265 |
Linear integrated circuit. Input level TTL, CMOS
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR SOP-16
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR DIP-16
LT Series Water Resistant Linear Position Transducer, 76,2 mm [3.0 in] Electrical Travel, 1.0 % Linearity, Cable Termination, Item Number F58000203
Level Meter
Linear integrated circuit. Input level DTL, TTL, PMOS, CMOS
|
ITT, Corp.
TE Connectivity, Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851 |
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
|
