PART |
Description |
Maker |
MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
EIA1314A-2P |
13.0-14.5GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1414-8P |
14.0-14.5GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1314-8P |
13.75-14.5GHz 8W Internally Matched Power FET
|
Excelics Semiconductor
|
EIA1414A-2P |
14.0-14.5GHz 2W Internally Matched Power FET
|
Excelics Semiconductor
|
MGFK37V4045_97 MGFK37V4045 MGFK37V404597 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS44V273598 MGFS44V2735_98 MGFS44V2735 |
2.7-3.5GHz BAND 25W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider 5GHZ 10 Fixed Modulus Divider 5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器) MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation] Mitel Semiconductor
|
NJG1552F-L5 NJG1552F-L3 NJG1552F-L7 NJG1552F-C8 NJ |
1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
LT5515 |
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
|
Linear
|