| PART |
Description |
Maker |
| ISC4356AS1 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| INC5006AC1 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| ISA2166AM1 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corpora...
|
| 2SC3441 2SC344110 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| ISA1399AS1 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SJ412 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ438 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| KTK2700 |
Silicon N Channel MOSFET(High Speed，High Voltage Switching Application，Motor Drive Application)(N沟道MOS场效应管(高速、高电压开关应用、电机驱动器应用 N沟道MOSFET（高速，高电压开关应用，电机驱动应用程序）（不适用马鞍山沟道场效应管（高速，高电压开关应用，电机驱动器应用）
|
KEC Holdings
|
| BC817 |
NPN Silicon Transistor (High current application Switching application)
|
AUK corp
|
| 2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
From old datasheet system
SMALL-SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Isahaya Electronics Corporation
ETC[ETC]
Isahaya Electronics Cor...
|
