| PART |
Description |
Maker |
| STW55NM60ND |
N-channel 600 V - 0.047 ヘ - 51 A TO-247 FDmesh⑩ II Power MOSFET (with fast diode)
|
STMicroelectronics
|
| RFD16N05L RFD16N05LSM FN2269 RFD16N05 |
From old datasheet system
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor
|
| RFD16N06LE RFD16N06LESM FN3628 |
16A/ 60V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| APT43F60B2 APT43F60L |
N-Channel FREDFET
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation
Microsemi, Corp.
|
| STW50NB20 |
N-CHANNEL 200V - 0.047 OHM - 50A - TO-247 POWERMESH MOSFET
|
ST Microelectronics
|
| IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
P Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| STGW30NC60KD |
60 A, 600 V, N-CHANNEL IGBT, TO-247
30 A - 600 V - short circuit rugged IGBT
|
STMicroelectronics
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
