| PART |
Description |
Maker |
| SPLMN98X2 |
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN81X2 |
808 nm, LASER DIODE
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| S1300-5MG-FW S1300-5MG-BL |
Un-cooled Laser diode with MQW structure Wide operation temperature range
|
Roithner LaserTechnik GmbH
|
| LSC2110-622-ST LSC2110-622 LSC2110-622-BI LSC2110- |
2.5 mW 14 Pin DIL Cooled Laser Module
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| NDL7910PC NDL7603P NDL7910P |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS
Optical Fiber Communication Laser Diode(光纤通信激光二极管)
|
NEC[NEC]
NEC Corp.
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| DL-3150-103 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
