PART |
Description |
Maker |
UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
|
Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
|
CY62136VLL-70BAI CY62136VLL-70ZI CY62136VLL-55ZI C |
2M (128K x 16) Static RAM x16 SRAM 128K x 16 Static RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44 128K x 16 Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
TC55V4336FF-100 |
128K Word x 32 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?32浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|
TC55V4376FF-83 |
128K Word x 36 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?36浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
IDT7009 IDT7009L15PF IDT7009L15PFI IDT7009L20PF ID |
USBF TV Field Memory Key 2048MB RAM Nickel RoHS Compliant: Yes From old datasheet system HIGH-SPEED 128K x 8 DUAL-PORT STATIC RAM 128K x 8 Dual-Port RAM
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
HLX6228AEN HLX6228ASF HLX6228ABF HLX6228ABN HLX622 |
128K x 8 STATIC RAM-Low Power SOI 128K x 8 STATIC RAM?Low Power SOI 128K x 8 STATIC RAMLow Power SOI 128K的8静态RAM?低功耗绝缘硅
|
List of Unclassifed Man... List of Unclassifed Manufacturers ETC[ETC] Honeywell Sensing Electronic Theatre Controls, Inc.
|
K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
CY7C09199V CY7C09199V-12AC CY7C09199V-6AC CY7C0919 |
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 64K X 9 DUAL-PORT SRAM, 25 ns, PQFP100 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 32K X 9 DUAL-PORT SRAM, 25 ns, PQFP100 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 32K X 8 DUAL-PORT SRAM, 18 ns, PQFP100 SM Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 11 A, Pin Plunger Actuator, Solder Termination Memory
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
TC518128AFW-12 TC518128AF-80 TC518128APL-12 |
128K X 8 PSEUDO STATIC RAM, 120 ns, PDSO32 128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32 128K X 8 PSEUDO STATIC RAM, 120 ns, PDIP32
|
|
CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM MoBL2 4-Mb (256K x 16) Static RAM MoBL® 4-Mbit (256K x 16) Static RAM 5V, 3.3V, ISR High-Performance CPLDs Licorice Board (CY22150 Candy Board) EEPROM MoBL® 4-Mbit (512K x 8) Static RAM EEPROM MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM MoBL® 2-Mbit (128K x 16) Static RAM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc. 3M Company
|