PART |
Description |
Maker |
V436664S24V V436664S24VXTG-75PC V436664S24VXTG-10P |
3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp Mosel Vitelic Corp
|
V437464E24V V437464E24VXTG-10PC V437464E24VXTG-75 |
3.3 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
V826664G24S |
512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64
|
Mosel Vitelic Corp Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] http://
|
1760 |
WOODHEAD? TESTERS PERFORM BASIC-VERIFICATION AND MULTIFUNCTION WIRE TESTING WITH COMPACT, SIMPLE-TO-USE DEVICES THAT
|
Molex Electronics Ltd.
|
KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
RT9266 RT9266CE |
Tiny Package, High Efficiency, Step-up DC/DC Converter Input Volt. Range(V) = 1~6.5 ;; Output Volt. Range(V) = Adjustable ;;
|
RICHTEK
|
X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32 SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28 RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28 Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp. Intersil Corporation
|
KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
IDT72T7295L6BBI IDT72T72115L6BBI IDT72T72105L4BB I |
2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 72-BIT CONFIGURATIONS 2.5伏高速TeraSyncTM FIFO72位配 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 72-BIT CONFIGURATIONS 16K X 72 OTHER FIFO, 4.5 ns, PBGA324
|
Integrated Device Technology, Inc.
|
|