PART |
Description |
Maker |
MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke 0.5-2.5 GHz Ultralinear Mixer w/LO Buffer 8.5 - 11 GHz 6-bit Phase Shifter Low Noise Amp, SB Gain Block X-band Discrete Power pHEMT Ku-band Discrete Power pHEMT 18mm HFET 24mm HFET Cell-Band CDMA PA Module; 1-Bit Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
TGF2021-08 TGF2021-08-15 |
DC - 12 GHz Discrete power pHEMT
|
TriQuint Semiconductor, Inc.
|
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 800V 3A Ultra-Fast Discrete Diode in a SMC package 400V 3A Ultra-Fast Discrete Diode in a SMC package 600V 3A Ultra-Fast Discrete Diode in a SMC package 100V 3A Ultra-Fast Discrete Diode in a SMC package 200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp. IRF[International Rectifier] VISHAY SEMICONDUCTORS
|
2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
20TQ040S 20TQ035S 20TQ045S 20TQ040 20TQ035STRR 20T |
40V 20A Schottky Discrete Diode in a TO-220AC package 45V 20A Schottky Discrete Diode in a D2-Pak package 35V 20A Schottky Discrete Diode in a D2-Pak package COG Technology, 128 x 64 pixel format SCHOTTKY RECTIFIER 40V 20A Schottky Discrete Diode in a D2-Pak package 45V 20A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
|
ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z) NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes List of Unclassifed Manufacturers
|
AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
2SJ602 2SJ602-S 2SJ602-ZJ 2SJ602-Z |
MOS FIELD EFFECT TRANSISTOR Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0632-3 00; No. of Positions: 30; Connector Type Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263
|
NEC Corp.
|