| PART |
Description |
Maker |
| BUZ902DP BUZ903DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
|
Magnatec
|
| BUZ908 BUZ907 |
POWER MOSFETS FOR AUDIO APPLICATIONS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MT6L53S MT3S05T MT3S06T |
VHF-UHF Band Low Noise Amplifier Application (Oscillator Applic)
|
TOSHIBA[Toshiba Semiconductor]
|
| IXFT80N085 IXFH80N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs
|
IXYS[IXYS Corporation]
|
| IXFN130N30 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS
http://
|
| IXFE39N90 |
HiPerFET Power MOSFETs Single Die MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| IXFR100N25 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
|
IXYS Corporation
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXFT66N20Q IXFH66N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| 2SC5422 EE07952 |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY/ COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLIC
From old datasheet system
|
Toshiba Semiconductor
|
