| PART |
Description |
Maker |
| APT20M13PVR |
POWER MOS V 200V 146A 0.013 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| H7N1004AB |
30 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| STN1N20 6772 |
From old datasheet system
N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR
|
STMicroelectronics
|
| APT20M18LVFR APT20M18B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL066HD4.3 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 100A 0.018 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| HUF75639S3S HUF75639G3 HUF75639P3 |
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| APT20M18LVR APT20M18B2VR |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.018 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| F20S6N-4100 |
20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| SHD239604 |
POWER MOSFETS 50 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
|
