PART |
Description |
Maker |
A67L16181E-7.5 A67L06361E A67L06361E-6.5 A67L06361 |
2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM 2米x 1800万米6 LVTTL,流通过ZeBL的SRAM 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM 2米x 1800万米36 LVTTL,流通过ZeBL的SRAM CAT 6 BLADE SERVER PATCH CABLE 15 WHT
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
A67P93181E-8.5F A67P93181E-7.5 A67P93181E-8.5 A67P |
512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
|
AMICC[AMIC Technology]
|
16297 16297-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact HTSNK, B X-FLOW, .4H LOW FLOW, THREADED HTSNK B X-FLOW .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
A67L9318E-4.2F A67L8336E A67L8336E-2.6 A67L8336E-2 |
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM DIODE ZENER SINGLE 500mW 5.1Vz 20mA-Izt 0.05 5uA-Ir 2Vr DO35-GLASS 5K/REEL
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行,LVTTL 128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行,LVTTL
|
NEC Corp. NEC, Corp.
|
KM432S2030CT-G7 KM432S2030CT-F10 KM432S2030CT-G6 K |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416S8030BN-G/FH KM416S8030BN-G/FL |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128MbSDRAM的收缩的TSOP 200万16 × 4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
IC61SF12836 IC61SF12832 IC61SF12832-7.5B IC61SF128 |
SYNCHRONOUS STATIC RAM, Flow Through 128K x 32 Flow Through SyncBurst SRAM
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
15985 15985-8 |
HTSNK, B X-FLOW. .911 LOW FLOW. THREADED HTSNK,B型X流0.911低流量。螺 HTSNK B X-FLOW. .911 LOW FLOW. THREADED
|
Vicor, Corp. VICOR[Vicor Corporation]
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