| PART |
Description |
Maker |
| 2SC3792 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| 2SC3808 |
NPN Epitaxial Planar Silicon Transistors for High hFE, Low-Frequency General-Purpose Amplifier Applications(用于高直流电流增益，低频通用放大器应用的NPN硅外延平面型晶体 瑞展HFE的高硅，低晶体管频率通用放大器应用（用于高直流电流增益，低频通用放大器应用的npn型硅外延平面型晶体管
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Electric Co., Ltd.
|
| 2SC36511 2SC3651 |
High hFE, Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC3650 |
High-hFE/ Low-Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| 2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| 2SC3807MP |
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| 2SC4666 |
High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max)
|
TY Semiconductor Co., Ltd
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
