| PART |
Description |
Maker |
| 2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
0.1 A, SILICON, SIGNAL DIODE
SILICON, PIN DIODE
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
| BA982 LL4148 LS4154 BAV21 LS4150 |
SILICON, VHF BAND, MIXER DIODE
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA
0.15 A, 35 V, SILICON, SIGNAL DIODE
0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.3 A, 50 V, SILICON, SIGNAL DIODE
|
TEMIC SEMICONDUCTORS
|
| 1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
| 1N457 1N457AT50R 1N457T50R 1N457ATR 1N457TR |
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Bulk 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35
Small Signal Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BAW74 BAW74D87Z |
High Conductance Fast Diode
Small Signal Diode 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| RGP10KE RGP10AE RGP10DE RGP10BE RGP10JE |
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
Diodes
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| MCL103B-GS08 |
DIODE SILICON, SIGNAL DIODE, ROHS COMPLIANT, GLASS, MICROMELF-2, Signal Diode
|
Vishay Semiconductors
|
| 1N4150UR-11 1N4150UR-1 JAN1N4150UR-1 |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| JAN1N5620 JANTX1N5614 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| JAN1N4148-1 BE112R |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; IFSM (A): 0.25; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.2 A, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
|
| 1N6661 |
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 225; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
|
