| PART |
Description |
Maker |
| 2N6387 2N6666 2N6388 2N6101 |
Leaded Power Transistor Darlington Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2SB17321 2SB1732TL |
Genera purpose amplification(−12V, −1.5A) 1500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
| CSB546O CSB546R CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401
|
Continental Device India Limited
|
| 2SB1709 |
Genera purpose amplification(−12V −1.5A) Genera purpose amplification(-12V, -1.5A)
|
ROHM[Rohm]
|
| 2N4901 2N4903 2N4902 |
COMPLEMENTARY SILICON POWER TRANSITORS Leaded Power Transistor General Purpose
|
Central Semiconductor C...
|
| BDW83B BDW83A |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6533 2N6532 2N6531 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6649 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6466 2N6467 2N4910 2N4911 2N6049 2N6261 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N5880 2N5881 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 40312 2N4900 2N6260 2N6263 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|