| PART |
Description |
Maker |
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| 2SB1732 |
Genera purpose amplification(−12V, −1.5A)
Genera purpose amplification(−12V −1.5A)
From old datasheet system
Genera purpose amplification(-12V, -1.5A)
|
ROHM[Rohm]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| CFD2059R CFD2059O |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 80 hFE. Complementary CFB1367R
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 240 hFE. Complementary CFB1367
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFB1367O
|
Continental Device India Limited
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| 2N5494 2N5490 2N5492 2N5496 |
Leaded Power Transistor General Purpose
NPN SILICON POWER TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| 2N6533 2N6532 2N6531 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6040 2N6041 2N6042 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6247 2N4398 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
