| PART |
Description |
Maker |
| 2SB17321 2SB1732TL |
Genera purpose amplification(−12V, −1.5A)
1500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
| 2SB1732 |
Genera purpose amplification(−12V, −1.5A)
Genera purpose amplification(−12V −1.5A)
From old datasheet system
Genera purpose amplification(-12V, -1.5A)
|
ROHM[Rohm]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| 2SA2018 |
PNP Genera Purpose Transistors
|
Weitron Technology
|
| 2N5189 |
Leaded Small Signal Transistor General Purpose
NPN SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CFD2375P CFD2375Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 800 - 1500 hFE.
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1000 hFE.
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1500 hFE.
|
Continental Device India Limited
|
| 2N6383 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6649 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6286 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N5880 2N5881 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N4923 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N6372 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
