| PART |
Description |
Maker |
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| CEN-U01BA CEN-U51BA CEN-U95 2N6548 2N6549 2N6552 2 |
Leaded Power Transistor Darlington
Leaded Power Transistor General Purpose
Power Transistors POWER TRANSISTOR, TO-202
Power Transistors 2 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-202
Power Transistors 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-202
Power Transistors 2 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-202
Power Transistors 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-202
Power Transistors 2 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-202
|
http://
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
|
Continental Device India Limited
|
| 2SA2018 |
PNP Genera Purpose Transistors
|
Weitron Technology
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| 2N6040 2N6041 2N6042 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6649 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6548 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N5880 2N5881 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N4923 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N6211 2N6213 2N6212 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
