| PART |
Description |
Maker |
| 2N6387 2N6666 2N6388 2N6101 |
Leaded Power Transistor Darlington
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| 2SB1732 |
Genera purpose amplification(−12V, −1.5A)
Genera purpose amplification(−12V −1.5A)
From old datasheet system
Genera purpose amplification(-12V, -1.5A)
|
ROHM[Rohm]
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| CDL13005 CDL13005A CDL13005B CDL13005C CDL13005E |
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 40 - 50 hFE.
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 20 - 31 hFE.
From old datasheet system
NPN PLASTIC POWER TRANSISTOR
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 10 - 21 hFE.
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 30 - 41 hFE.
|
Continental Device India Limited
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2N5494 2N5490 2N5492 2N5496 |
Leaded Power Transistor General Purpose
NPN SILICON POWER TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| PMD10K40 MJ1000 MJ2500 MJ2501 PMD1701K PMD1702K MJ |
TWO BOLT CLAMP
Leaded Power Transistor Darlington
From old datasheet system
Power Transistors
|
Wing Shing Computer Components
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
|
| 2N6649 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6548 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N5880 2N5881 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N6497 2N6498 2N6499 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N6247 2N4398 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
