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NDP508B - N-Channel Enhancement Mode Field Effect Transistor9A,80V.08ΩN沟道增强型MOS场效应管(漏电流19A, 漏源电压80V,导通电.08Ω 19 A, 80 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

NDP508B_1024389.PDF Datasheet

 
Part No. NDP508B NDP508BE NDB508BE NDB508A NDB508AE NDB508B
Description N-Channel Enhancement Mode Field Effect Transistor9A,80V.08ΩN沟道增强型MOS场效应管(漏电流19A, 漏源电压80V,导通电.08Ω 19 A, 80 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]



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 Full text search : N-Channel Enhancement Mode Field Effect Transistor9A,80V.08ΩN沟道增强型MOS场效应管(漏电流19A, 漏源电压80V,导通电.08Ω 19 A, 80 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
 Product Description search : N-Channel Enhancement Mode Field Effect Transistor9A,80V.08ΩN沟道增强型MOS场效应管(漏电流19A, 漏源电压80V,导通电.08Ω 19 A, 80 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB


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